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eldo manual downloadAnd by having access to our ebooks online or by storing it on your computer, you have convenient answers with Eldo User Manual. To get started finding Eldo User Manual, you are right to find our website which has a comprehensive collection of manuals listed. Our library is the biggest of these that have literally hundreds of thousands of different products represented. I get my most wanted eBook Many thanks If there is a survey it only takes 5 minutes, try any survey which works for you. This tool uses JavaScript and much of it will not work correctly without it enabled. Please turn JavaScript back on and reload this page.The case is, I design a circuit, and want to optimize the “chip” node’s AC voltage. The parameter variable is C1 and L1. The question is: How do I set up the optimize, Chose objective or extract. In the objective tab, how to setup the extraction function. Recommended Content More port needs to be open. Mentor License Installation-Port Not Available License Checkout Issue license issue: new license file but port is in use Problems with license server All Rights Reserved. Range (mV dc). Resolution. In order for HandleEasy to work together with yourScooter can be found in the rear of this manualCurtis,. Technical support for Software Wedge related questions is providedDiagnosing Serial Communications Problems (This product is. YourCommon Warning Signs.Code Editor is an advanced text editor fashioned to satisfy the needs of pro-. In Unix or on an Apple computer to compile the code, you can execute the provided.AREA Specifications................ 4-113. Multiple Input Digital Gates. The original recipient of this document may duplicate this document in whole or in part for internal business purposes only, provided that this entire notice appears in all copies. In duplicating any part of this document, the recipient agrees to make every reasonable effort to prevent the unauthorized use and distribution of the proprietary information.http://atomicattack.com/atomic/fckimages/datalogic-quickscan-m2-user-manual.xml

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This document is for information and instruction purposes. Mentor Graphics reserves the right to make changes in specifications and other information contained in this publication without prior notice, and the reader should, in all cases, consult Mentor Graphics to determine whether any changes have been made. The terms and conditions governing the sale and licensing of Mentor Graphics products are set forth in written agreements between Mentor Graphics and its customers. No representation or other affirmation of fact contained in this publication shall be deemed to be a warranty or give rise to any liability of Mentor Graphics whatsoever.Use, duplication or disclosure by the U.S. Government or a U.S. Government subcontractor is subject to the restrictions set forth in the license agreement provided with the software pursuant to DFARS 227.72023(a) or as set forth in subparagraph (c)(1) and (2) of the Commercial Computer Software - Restricted Rights clause at FAR 52.227-19, as applicable. No one is permitted to use these Marks without the prior written consent of Mentor Graphics or the respective third-party owner. The use herein of a thirdparty Mark is not an attempt to indicate Mentor Graphics as a source of a product, but is intended to indicate a product from, or associated with, a particular third party. Eldo offers a unique partitioning scheme allowing the use of different algorithms on differing portions of design. It allows the user a flexible control of simulation accuracy using a wide range of device model libraries, and gives a high accuracy yield in combination with high speed and high performance. This flow provides a complete, front-to-back design and verification environment for analog, mixed-signal and RF. A brief description of each is given below: 1-2.cir The main Eldo control file, containing circuit netlist, stimulus and simulation control commands.http://deesudcoolingtower.com/userfiles/datalogic-quickscan-manual.xml This file is SPICE compatible, the Eldo control language being a superset of the Berkeley SPICE syntax..chi SPICE compatible output log file containing ASCII data, including results and error messages..wdb A binary output file for mixed-signal JWDB format files. Viewed with the EZwave waveform viewer. The resulting output file is smaller than files based on the cou format files. This file contains information on waveforms and their display and cursor settings, window format settings and complex waveform transition settings..cou A binary output file containing Eldo analog simulation results data. A special interface is provided to access this data from your own post-processor software if required. MGC postprocessors also read and write to this file. Please refer to Eldo cou Library User’s Manual for more details..ext A file containing extraction or waveform information, created when using a.EXTRACT command in the netlist. This file will not always be output, it depends on the type of simulation and the specification of the.EXTRACT command. Other files not shown in the figure are:.meas A file containing extraction or waveform information when the commands.EXTRACT or.PLOT W(XX) are present in an input netlist. This type of file is also generated when functions are used in.DEFWAVE commands. In most cases, the result of such functions are known only at the end of the simulation, so the waves issued from a.DEFWAVE can not be plotted in the standard.cou file, but only in a specific file generated at the end of the simulation. This file has the.meas extension. This kind of file is empty if you don’t use.PLOT or.PRINT commands in the netlist..aex A file containing extraction information, created when.OPTION AEX is used in conjunction with a.EXTRACT command..pz The output file used by the Pole Zero post-processor..spi3 SPICE3 compatible output file..wsf Cadence compatible output file. The.pz,.spi3,.wsf,.wdb and.http://afreecountry.com/?q=node/4172isdb files are only produced by Eldo when the user has set appropriate options in the input file. For more details, refer to Simulator Commands. Input and output formats are compatible with Berkeley SPICE 2G6, however Eldo provides additional features not implemented in SPICE. Schematic Example This example consists of a simple cascade of three inverters. The figures below show the circuit diagram for the cascade together with the inverter subcircuit. In order to create the Eldo netlist, node names must be assigned to the circuit. For further information, please refer to Eldo Control Language.If not specified, the current release is used. Specified on its own no simulation is performed. There is no limit on the number of search paths that can be used. This is useful when it is known that the output file will be very large. However, for FFT, floating numbers are sometimes inappropriate as they cause a loss in accuracy. This can also be specified using the invoke command -gwl cou. When JWDB output is not disabled, the.cou database will only contain real and imaginary parts of complex waveforms. Phase, magnitude and dB formats can be built dynamically from real and imaginary waveforms by Xelga, but only real and imaginary parts of complex waveforms will be displayed in Xelga when opening the.cou file, whatever the format requested in the netlist. CSDF is the Common Simulation Data Format, see also CSDF option on page 11-52. -gwl isdb Generate ISDB format for SimWave, see also ISDB option on page 11-53. -gwl psf Generate binary Cadence format (used with Artist Link), see also PSF option on page 11-54. -gwl psfascii Generate Cadence format in ASCII, see also PSFASCII option on page 11-54. -gwl psfop Generate output for OP data in binary Cadence format (used with Artist Link). Can be used if PSF files are required for back-annotation of the OP results. -gwl psfasciiop Generate output for OP data in ASCII Cadence format (used with Artist Link).http://acropolissa.com/images/1020-hp-printer-service-manual.pdf This option automatically enables option -gwl jwdb if required. Eldo will plot the waveforms as defined in the netlist. Loads Eldo in incremental saving mode. Incremental saving allows the user to save the waveform data to a.wdb file when the Joint Wave DataBase (JWDB) reaches the threshold specified (in bytes). Incremental saving allows the user to save the waveform data to a.wdb file when the Joint Wave DataBase (JWDB) reaches the threshold specified (in Megabytes). The default value is 100 MB. Also, it will not ask whether or not to re-enter FAS debugger, if necessary. Note The command VDB(x) will always dump VDB(x). Allows the user to define variables used by the preprocessor. This was the default mechanism in the v5.8 version of Eldo. All the libraries (.LIB) are included without filtering the objects (model, card, or subcircuit) that are not used in the specific netlist. Eldo will decorrelate the simulation from the extraction. This functionality can also be specified with the netlist command.EXTMOD, see page 10-94. This enables simulation of circuits which would require more than 2GB of memory, and which would therefore not work on 32-bit machines. This file is an ASCII file which is read by the DA-IC environment. Full details are provided where applicable throughout this manual. A path can be defined as long as the directory exists. See also VERBOSE option on page 11-43. Eldo will print hints about syntax which is valid but ignored if the appropriate analysis is not found in the netlist. For example: Warning 10001: No optimization command has been found in the netlist. Eldo will share computer resources on a multi-processor machine. Eldo will make use of all the possible CPUs on the machine. See also MTHREAD option on page 11-8. Eldo will then use these processors as much as possible. It will share the work between the different CPUs in order to speed-up simulation. Note that the CPUs should not already be in use, otherwise simulation will be slower. Statistics, generated at the end of simulation, show how many CPUs have been used for the current simulation. This number will also be printed out at the beginning of the TRAN simulation. Multi-threading is not available on Linux 64-bit machines. Eldo will share computer resources for multi-threading a single DC or TRAN simulation. Eldo will make use of the number of CPUs as specified with this flag. The number specified can exceed the number of CPUs available, but this is not recommended. See also USETHREAD option on page 11-13. Entering eldo -help without any option will display the list of available topics. Running the STMicroelectronics Version of Eldo The STMicroelectronics version of Eldo can be run from the command line using the following additional command line flag: eldo -stver. The Eldo Control Language is used to specify all circuit descriptions and simulation commands in the.cir file. The Eldo Control Language is a superset of the standard Berkeley SPICE 2G6 language. Standard Berkeley SPICE control files will thus be accepted by Eldo. However, Eldo provides additional features not available in SPICE. This chapter provides an overview of the.cir file structure and general aspects of the language syntax. The following chapters then provide full definitions of the Eldo control language syntax for device, source and macromodel instantiations, and all of the command set. The later chapters in this manual contain the complete descriptions of all the devices, sources, macromodels and commands listed in the following pages. This chapter is designed as a quick reference to the syntax for these and is of use to the more experienced user. Documentation Conventions See the Documentation Conventions for a detailed description of the meanings of the different fonts, brackets, etc.First Line The first line is format free and reserved for the circuit title. This line is mandatory and serves as the heading on graphical results output. Continuation Lines The length of one input line is limited to 2000 characters. If the comment follows an Eldo statement on the same line, it must begin with the ! character. The ! character must be preceded by a white space. Parameter names should not contain boolean operators. Such a name can be quite ambiguous. String Parameters Eldo accepts quoted character strings as parameter values. These string values may be used for model names and filenames. If the first character of a node name is numeric then it is forbidden for an alphabetic character to follow in the same name: all characters must then be numeric. Numeric characters can, however, follow an alphabetic character in the same node name. 1TOTO Illegal node name. 123 Legal node name. TOTO1 Legal node name. Node Names Used Inside Subcircuits If we wish to access nodes from a higher level of hierarchy than that in which they are defined, it may be done as shown in the following example: X27.X113.N3 Legal node name. The node N3 is located within a subcircuit X113 which, in turn, is located inside another subcircuit X27. For more information about the usage of nodes inside subcircuits, please refer to “.SUBCKT” on page 10-306. Values Values are always handled as real numbers. This causes compilation of the netlist to be broken, giving an error message. Hence 10, 10V and 10Hz all represent the same number, 10. These are not the Eldo default because the parsing of large circuits may be significantly slower. The -E flag forces Eldo to provide only the main netlist to the C pre-processor, whereas -EE ensures that all include files will be pre-processed before parsing. Note: The C pre-processor analyses files independently. Arguments of the macro will be replaced by the literals in the macro call. Arithmetic Functions A set of arithmetic functions may be used in Eldo for the calculation of device parameters, model parameters, new waves etc. Corresponding errors are: ERROR 3040: Nested complex(,) functions is not allowed. Note In Eldo standard mode: sqrt(x) returns an error if x is negative. Operators Operator Precedence The order of precedence and associativity of operators in Eldo affect the evaluation of expressions. Expressions with higher-precedence operators are evaluated first. Table 3-3 summarizes the precedence and associativity (the order in which the operands are evaluated) of Eldo operators, listing them in order of precedence from highest to lowest. Mathematical grouping within expressions must be done using normal brackets ( ). Constants and parameters may be used in expressions, together with the built-in functions and operators described above. NCNODS Number of nodes after subcircuit expansion. NUMNOD Total number of nodes including those created by parasitic resistances. NUMEL Total number of elements contained in the circuit. DIODES Number of diode elements contained in the circuit. BJT Number of BJT elements contained in the circuit. JFET Number of JFET elements contained in the circuit. MOSFET Number of MOSFET transistor elements contained in the circuit. NTERM Number of terms in the matrix. Newton Block Information When Eldo creates a number of Newton blocks, the following information is written to the.chi file: NBLOCKS NODEBLK MAXSIZE MINSIZE where the parameters have the following definitions: NBLOCKS Total number of Newton blocks created. NODEBLK Number of nodes contained in each Newton block. MAXSIZE Size of the biggest Newton block. MINSIZE Size of the smallest Newton block. LTERTP Number of time steps rejected due to LTE. INWCALL Total number of iterations or Newton calls needed to solve the Newton blocks. ITERNW Total number of Newton calls for.OP,.DC and.AC analyses and is the average number of Newton calls needed to achieve convergence for a.TRAN analysis. MEMSIZE Memory size allocated to the circuit by Eldo. NKIRCH Number of calls or iterations needed to solve Kirchoff’s Law (OSR only). NMAXCALL Maximum number of calls needed to solve a time or DC point. ITERM Average number of OSR loops. LATENCY Percentage of latency in the circuit. Temperature Handling Eldo allows temperature handling using the commands.TEMP, TNOM, TMOD and T and allows formulation of temperature dependent functions using the variable TEMPER (or TEMP). These commands and functions are briefly described below: The TNOM function from the.OPTION command is used to set the nominal simulation temperature, i.e. the temperature at which parameter calculations are made. TNOM is a reserved keyword, however it may be specified as a parameter in a.PARAM command when.OPTION DEFPTNOM is set. The TMOD parameter (in certain models) is used to set the model temperature. The value of this parameter overrides the.TEMP command above. The T parameter (in certain devices) is used to set the temperature of an individual instance of a device or model. This parameter overrides the TMOD command above. Please refer to the Device Models chapter. To summarize, the order of priority of the above temperature related commands and parameters is T, then TMOD and then.TEMP, with decreasing priority, i.e. T has the highest priority. TEMPER is a variable returned by the simulator which gives the value of the current simulation temperature and may be used in subsequent calculations. This variable will be the present simulation temperature resulting from either a.TEMP command, a.DC TEMP sweep or, if neither are specified, the value of TNOM given in the.OPTION command. The TEMPER variable may be used in the formulation of temperature dependent expressions. Any expressions containing the TEMPER variable will be automatically reevaluated in the case of a change in this temperature. Note The TEMP variable is synonymous with the TEMPER variable. Both refer to the temperature of the circuit. Refer to these components in the Device Models chapter.This value can be assigned directly or via the.PARAM command. Optional if a resistor model is used. For more information on.PARAM, see page 10-205 of this manual. Default values are zero. This enables the instantiation of a frequency-dependent resistor to be simulated in all analysis modes (AC, Transient, SST and MODSST). The expression can make use of the FREQ keyword to specify frequency. A typical application is to model skin-effect, with R varying according to SQRT(FREQ). If the value of the resistor is defined by a VALUE expression, the actual value will be recalculated at each timestep during transient analysis. However, if an AC analysis is performed, the value is calculated only once in the DC analysis, and then considered to be static. Default value is 0.0. Note TEMP and DTEMP are mutually exclusive. Models are chosen depending on input W and L, if required. Options MINL, MAXL, MINW, MAXW, etc. Note FMIN and FMAX define the frequency band of the noise sources. This frequency range may sometimes not correspond to the noise frequency band at the output of the circuit. For instance, the band (FMIN, FMAX) does not correspond to the output noise frequency band in the case of filters or oscillators and mixers that exhibit frequency conversion. FMIN is also used to specify the algorithm used to generate the noise source generated by the resistor. Default value is 50. It is used in transient analysis to perform impulse response using a convolution method. It must have the form 2n for the convolution computation (automatic check and correction are done if not). The user can specify the minimum value that resistors in the netlist can take using the option RSMALL. For more information please refer to page 11-37. Noise in Resistors The thermal noise of a resistor is as follows: 4. Level 1 Table 4-2. Resistor Model—Level 1 Parameters Nr. The below equation defines resistor value as a function of temperature, where T is the operating temperature specified either by the.TEMP command, or the T parameter. Tnom is the nominal temperature for which the resistor has resistance VAL. Then, the active value of the resistor will be equal to the product of the “biasindependent value” multiplied by the polynomial expression. VC1 is equivalent to the first parameter of the polynomial array, VC2 is equivalent to the second parameter of the polynomial array. Assuming the model:.MODEL Foo C POLY P1 P2 P3. They do not interact directly within the computation. If parameter REVSP is set to 1 on the.MODEL card, and if POLYV is not 2, then the formula for computing the current generated by the resistor is: 2 V. For a description of equations please contact STMicroelectronics. This is the default model when the -stver flag is specified (or.option stver). Parameters: Table 4-3. Resistor Model—Level 2 Parameters Nr. Level 3 This corresponds to the RC Wire model. Please see the “RC Wire” on page 4-28. Level 4 This is the default model inside Accusim. Parameters: Table 4-4. Resistor Model—Level 4 Parameters Nr. This value can be assigned directly or via the.PARAM command. Optional if a capacitor model is used. This enables the instantiation of a frequency-dependent capacitor to be simulated in all analysis modes (AC, Transient, SST and MODSST). A typical application is to model skin-effect, with C varying according to SQRT(FREQ). If this is not the case, errors will occur. The total capacitor value will be multiplied by this parameter value. If an AC analysis is performed however, the value is calculated only once in the DC analysis, and then considered to be static. VC1 is equivalent to the first parameter of the polynomial array, VC2 is equivalent to the second parameter of the polynomial array. c. Coxeff is computed as EPSO. DI ? TOX if TOX is specified, EPSO. Tip: For detailed information on usage of POLY, REVSP, and POLYV parameters, see page 4-9 of this manual. This value can be assigned directly or via the.PARAM command. Optional if an inductor model is used. This enables the instantiation of a frequency-dependent inductor to be simulated in all analysis modes (AC, Transient, SST and MODSST). A typical application is to model skin-effect, with L varying according to SQRT(FREQ). The inductor is expressed as a function of the current I across the element. When R TABLE is specified, it indicates that the resistor accepts a table description, with pairs of frequency and resistor values specified. This device is supported for all analyses (DC, AC, TRAN, SST, MODSST, etc.). Note If the value of the inductor is defined by a POLY or VALUE expression, the actual value will be recalculated at each timestep during transient analysis. It is described by a multi-port inductor record and the matrix values are provided through a data block (.DATA). Values in the matrix are reluctance values, not inductance values. The unit for reluctance is inverse Henry (H-1).The data files should contain three columns of data. Each row should contain an (r, c, val) triplet separated by spaces. The r, c, and val values may be expressions surrounded by single quotes. Multiple files may be specified to allow the reluctance data to be spread over several files if necessary. This new model is based on a totally new approach, accounting for the complex bi-dimensional structure of lateral transistors. The Modella model allows the simulation of lateral devices using real physically based parameters, instead of using less accurate empirically-modified vertical models, such as Gummel-Poon. In the design of bipolar analog integrated circuits, greater flexibility is often achieved when both NPN and PNP transistors are incorporated in the circuit design. Many present day bipolar production processes use the conventional lateral PNP as the standard PNP transistor structure. For accurate modeling of such a lateral PNP transistor it is important to take the complex twodimensional nature of the transistor into account. Using a modeling approach whereby the main currents and charges are independently related to bias-dependent minority carrier concentrations. Current crowding effects, high injection effects, and a bias dependent output impedance are all taken into account. Please refer to the Modella Equations of the Eldo Device Equations Manual. For model parameters, please refer to the Philips Modella Model (Eldo Level 23) Parameters of the Eldo Device Equations Manual. The following table shows the DC operating points that are printed in the.chi file in an OP and AC analysis. Please refer to the DC Operating Point Output of the Eldo Device Equations Manual. The latter is caused by the more accurate transit time and transfer current formulation. However HICUM v2.x is recommended for more accurate results in physical based device modeling of bipolar transistors. Please refer to the HICUM Level0 Equations of the Eldo Device Equations Manual. For model parameters, please refer to the HICUM Level0 Model (Eldo Level 24) Parameters of the Eldo Device Equations Manual. This parameter has no effect when FMIN is set to 0. Note FMIN and FMAX define the frequency band of the noise sources. Note FMIN is also used to specify the algorithm used to generate the noise source generated by the JFET. Noise in JFETs Noise models are available for JFETs, see “Noise” on page 11-20 of the Eldo Device Equations Manual. The DC characteristics are defined by the VTO and BETA parameters, which determine the variation of drain current with gate voltage, LAMBDA, which determines the output conductance, and IS, the saturation current of the two gate junctions. The ohmic resistances, RD and RS are included. Charge Storage is modeled by non-linear depletion layer capacitances for both gate junctions. The following predefined JFET device models can be selected using the LEVEL parameter: Table 4-28. For model parameters, please refer to the JFET Model (Eldo Level 1, 2 and 3) Parameters of the Eldo Device Equations Manual. For model parameters, please refer to the MESFET Model (Eldo Level 6, 7 and 8) Parameters of the Eldo Device Equations Manual. For model parameters, please refer to the MESFET Model (Eldo Level 9, Update 1, 2 and 3) Parameters of the Eldo Device Equations Manual. Any number of pins can be specified. If there is no such string, the model name is assumed to be the 5th string, e.g. In the example below, E is assumed to be the model name. M1 A B C D E F. In the example below, F is assumed to be the model name. NRD is multiplied with sheet resistance RSH to obtain parasitic series drain resistance of each transistor. Note Default value for all optional parameters is zero unless otherwise stated. If L or W are not specified, via the device instantiation statement, then they will take the values of the DEFL and DEFW parameters in the.OPTION command on page 11-31. The MOS geometry parameters can be assigned directly or via “.PARAM” on page 10-205. This also applies to BJTs, diodes and sub circuits. For more information see page 4-111, page 4-104 and page 4-172 respectively. The same system exists for the STMicroelectronics models. Berkeley SPICE BSIM3SOI v1.3 Model (Eldo Level 55) BSIM3SOI v1.3 is an officially released SOI (Silicon On Insulator) MOSFET model from the Device Group at the University of California at Berkeley. The model can be used for both Partially Depleted (PD) and Fully Depleted (FD) devices. Many advanced concepts are introduced so as to allow transition between PD and FD operation dynamically and continuously, namely the Dynamic Depletion Approach. The basic I-V model is modified from the BSIM3v3.1 equation set. Please refer to the BSIM3SOI Equations of the Eldo Device Equations Manual. Both BSIMSOI v2.x and v3.x models can be used for Partially Depleted (PD) and Fully Depleted (FD) devices. For the BSIMSOIv2.x model many advanced concepts were introduced so as to allow transition between PD and FD operation dynamically and continuously, namely the Dynamic Depletion Approach (DD). The user is able to select one of these three modes using a parameter selector called SOIMOD. The basic I-V model is modified from the BSIM3v3.1 equation set. Please refer to the BSIM3SOI v2.x and v3.x Equations of the Eldo Device Equations Manual. The different versions are accessible through the model parameter VERSION as shown in the table below. For versions v3.0 and v3.1, the SOIMOD values have changed in Eldo to be compatible with the Berkeley standard values. Please see the following table: Table 4-44. SOIMOD Selection Model SOIMOD for v2.x (Eldo specific) SOIMOD for v3.0 (Spice compatible) SOIMOD for v3.1 (Spice compatible) FD module over PDa - 1 1 a. The FD module is an addition of some equations over the PD module to make the PD module also fit FD devices. The different versions are handled separately inside this chapter. Specifying five nodes implies that the fifth node is the external body contact node, with a body resistance between the internal and external terminals. This configuration applies to a distributed body resistance simulation. Specifying six nodes implies a body contacted case with an accessible internal body node (sixth node). Specifying seven nodes implies that the seventh node is the temperature node. You can specify five nodes for a device with floating body. Specifying six nodes implies body contact. Seven nodes is a body contacted case with an accessible internal body node. An improved BSIM3v3 based model is also included. This model is formulated on top of the BSIM3v3 framework.